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PD - 96158
IRF8252PBF
Applications
Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters
l
HEXFET(R) Power MOSFET
VDSS
RDS(on) max
Qg
25V 2.7m:@VGS = 10V 35nC
A A D D D D
Benefits
l l l l l l l l
Very Low Gate Charge Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating 100% tested for Rg RoHS Compliant (Halogen Free) Low Thermal Resistance
S S S G
1 2 3 4
8 7
6 5
Top View
SO-8
Description
The IRF8252PBF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8252PBF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
25 20 25 20 200 2.5 1.6 0.02 -55 to + 150
Units
V
c
A
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
W W/C C
Thermal Resistance
RJL RJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 9
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1
07/07/08
IRF8252PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min. Typ. Max. Units
25 --- --- --- 1.35 --- --- --- --- --- 89 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.018 2.0 2.9 1.80 -6.67 --- --- --- --- --- 35 10 4.6 12 8.9 16 26 0.61 23 32 19 12 5305 1340 725 --- --- 2.7 3.7 2.35 --- 1.0 V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 25A m VGS = 4.5V, ID = 20A V VDS = VGS, ID = 100A
e e
mV/C VDS = VGS, ID = 100A VDS = 20V, VGS = 0V A VDS = 20V, VGS = 0V, TJ = 125C 150 VGS = 20V 100 nA -100 VGS = -20V --- S VDS = 13V, ID = 20A 53 --- --- --- --- --- --- 1.22 --- --- --- --- --- --- --- Typ. --- --- nC nC VDS = 13V VGS = 4.5V ID = 20A See Figs. 15 & 16 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 20A RG = 1.8 See Fig. 18 VGS = 0V VDS = 13V = 1.0MHz Max. 231 20 Units mJ A
ns
pF
Avalanche Characteristics
EAS IAR
d
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 19 12 3.1 200 1.0 29 18 A A V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 20A, VGS = 0V TJ = 25C, IF = 20A, VDD = 13V di/dt = 230A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF8252PBF
1000
TOP
1000
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1 0.1 0.01
10
60s PULSE WIDTH
2.3V Tj = 25C
1
2.3V
60s PULSE WIDTH
Tj = 150C 0.1 0.1 1 10 100
0.001 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
1.6
ID, Drain-to-Source Current (A)
VDS = 15V 60s PULSE WIDTH 100
ID = 25A 1.4
VGS = 10V
1.2
10
T J = 150C
1.0
1
T J = 25C
0.8
0.1 1 2 3 4 5
0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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3
IRF8252PBF
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
14.0
VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
ID= 20A
VDS= 20V VDS= 13V
C, Capacitance (pF)
10000 Ciss Coss 1000 Crss
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 1msec
ISD, Reverse Drain Current (A)
100
T J = 150C
ID, Drain-to-Source Current (A)
100
10 10msec 1
10
T J = 25C
T A = 25C
VGS = 0V 1.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 0.1 0
Tj = 150C Single Pulse 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF8252PBF
30 25
ID, Drain Current (A)
VGS(th) , Gate Threshold Voltage (V)
2.5
20 15 10 5 0 25 50 75 100 125 150 T A , Ambient Temperature (C)
2.0 ID = 100A
ID = 250A
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) C/W
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01
R1 R1 J J 1 R2 R2 R3 R3 R4 R4 R5 R5 R6 R6 R7 R7 R8 R8 A 1 2 2 3 3 4 4 5 5 6 6 7 7 A
Ri (C/W) i (sec) 0.02127 0.000002 0.02040 0.000006 0.21216 0.000082 0.79696 0.001560 6.31529 0.028913 0.45152 0.006475 26.2230 1.208856 16.5590 45.68988
0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.01 0.1 1 10 100 1000
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF8252PBF
RDS(on), Drain-to -Source On Resistance (m )
EAS , Single Pulse Avalanche Energy (mJ)
7 ID = 20A 6 5 4 3 2 1 2 4 6 8 10
1000 900 800 700 600 500 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) ID 2.45A 8.0A BOTTOM 20A TOP
TJ = 125C
T J = 25C
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
L
0
VDS
L
DUT 1K 20K
S
VCC
RG
20V
D.U.T
IAS tp
+ - VDD
A
0.01
I AS
Fig 14. Unclamped Inductive Test Circuit and Waveform
Id
Fig 15. Gate Charge Test Circuit
Vds Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
6
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IRF8252PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V DS V GS RG
RD
VDS 90%
D.U.T.
+
- V DD
V GS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr td(off) tf
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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IRF8252PBF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF8252PBF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.12mH, RG = 25, IAS = 20A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2008
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